Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device
نویسندگان
چکیده
Oxide semiconductors are of particular interest in the field integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with linearity based on unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) a-SIZO exhibits maximum mobility 9.8 cm2/Vs at VD 5 V, on/off ratio ~ 106, stable threshold voltage (VTh) -0.35 V. Additionally, optical properties proposed FET include excellent VTh shift photocurrent (Iphoto) under various red-light illumination. enhancementload type shows reliable electrical characteristics gain 0.7 VDD 1 V linear photo-response terms shift, demonstrating promising potential for optoelectronic applications.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2020.3048725